Irradiation effects with 100 MeV Xe ions on optical properties of Al-doped ZnO films

Fukuoka, Osamu*; Matsunami, Noriaki*; Tazawa, Masato*; Shimura, Tetsuo*; Sataka, Masao; Sugai, Hiroyuki; Okayasu, Satoru

Nuclear Instruments and Methods in Physics Research B, 250(1-2), p.295 - 299, 2006/09

https://doi.org/10.1016/j.nimb.2006.04.146

We have investigated the effects on electrical and optical properties of Al-doped ZnO (AZO) semiconductor films induced by high-energy heavy ion. The AZO films with c-axis on SiO glass substrate were prepared by a RF-sputter-deposition method at 400 C. Rutherford backscattering spectroscopy shows that the Al/Zn composition and the film thickness are 4 % and 0.3 m. No appreciable change was observed in optical transparency. We find that the conductivity monotonically increases from 1.510 to 810 S/cm with increasing the fluence up to 410/cm, as already been observed for 100 keV Ne irradiation. The fluence of 100 keV Ne at which the conductivity takes its maximum is 310/cm (7 dpa). The dpa of 100 MeV Xe at 410/cm is estimated as 0.008. Hence, the conductivity increase by 100 MeV Xe ion is ascribed to the electronic excitation effects.

Synthesis of sulfur-doped TiO by ion implantation

Umebayashi, Tsutomu; Yamaki, Tetsuya; Yamamoto, Shunya; Tanaka, Shigeru; Asai, Keisuke*

Transactions of the Materials Research Society of Japan, 28(2), p.461 - 464, 2003/06

TiO is promising as a photocatalytic material. However, it is active only under UV light irradiation because of its wide band gap (3.0 eV). We recently reported that sulfur (S) doping caused the optical absorption edge of TiO to be shifted into the lower energy region. Based on the theoretical analyses using first principles band calculations, mixing of the S 3p states with the valence band was found to contribute to the bandgap narrowing. In this study presented here, S-doped TiO was prepared by ion implantation and subsequent thermal annealing. S was implanted into the single crystals of rutile TiO with a fluence of 8 10 ions/cm. According to the results of RBS/channeling analysis, irradiation damage recovered after the annealing at 600 C in air. In the annealed crystal, S atoms occupied O sites to form Ti-S bonds, as assessed by XPS.

None

*; Akatsuka, Hiroshi*; *; Suzuki, Tatsuya*; *; *;

JNC TY9400 2000-009, 41 Pages, 2000/03

JNC-TY9400-2000-009.pdf:1.22MB

no abstracts in English

Measurement of visible emission profiles of JFT-2M tokamak H-mode plasmas with Thomson scattering apparatus

Yamauchi, Toshihiko;

Japanese Journal of Applied Physics, 28(4), p.L707 - L710, 1989/04

https://doi.org/10.1143/JJAP.28.L707

no abstracts in English

Development of in-water wireless transmission system with visible light signal

Otsuka, Noriaki; Takeuchi, Tomoaki; Tsuchiya, Kunihiko; Shibagaki, Taro*; Komanome, Hirohisa*

no journal, , 

no abstracts in English

高輝度光源からの光の輝度レベルを検出するための方法

武内 伴照

柴垣 太郎*; 駒野目 裕久*; 澤 隆雄*; 後藤 慎平*; 小澤 佑介*

JP, 2022-057100  Patent licensing information  Patent publication (In Japanese)

【課題】イメージセンサの飽和レベルを超える強さを持つ光の輝度レベルを検出するための、高輝度光源からの光の輝度レベルを検出する方法、装置及び光通信システムを提供する。 【解決手段】方法は、第1の発光素子11からの光をイメージセンサ13で受光するステップと、第1の発光素子11からの光を受光した受光領域のうち、受光量がイメージセンサ13の飽和レベルより大きい第1の飽和領域を検出するステップと、第1の発光素子11からの光の輝度レベルを表す第1の検出値として、第1の飽和領域の大きさを決定するステップと、を含む。